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| Datasheet File OCR Text: |
| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23 BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 20 500 -55 to +150 UNIT V A A V mW C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 10 30 1 23 30 MAX. UNIT V nA nA A CONDITIONS. ID=100A, VGS=0V VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=25mA* VGS=5V, ID=100mA* * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-23 |
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